general features v ds = 100v,i d =30a r ds(on) < 31m ? @ v gs =10v (typ:27m ? ) special process technology for high esd capability high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation application power switching application hard switched and high frequency circuits uninterruptible power supply schematic diagram marking and pin assignment to-252 -2ltop view package marking and ordering information device marking device device package reel size tape width quantity MSN1030D MSN1030D to-252-2l - - - absolute maximum ratings (t c =25 unless otherwise noted) symbol parameter limit unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d drain current-continuous 30 a i d (100 ) drain current-continuous(tc=100 ) 21 a i dm pulsed drain current 70 a p d maximum power dissipation 85 w derating factor 0.57 w/ e as single pulse avalanche energy (note 5) 256 mj t j ,t stg operating junction and st orage temperature range -55 to 175 MSN1030D 100v(d-s) n-channel enhancement mode power mos fet more semiconductor company limited http://www.moresemi.com 1/6 lead free pin configuration
thermal characteristic r jc thermal resistance, junction-to-case (note 2) 1.8 /w electrical characteristics (t c =25 unless otherwise noted) symbol parameter condition min typ max unit off characteristics bv dss drain-source breakdown voltage v gs =0v i d =250 a 100 115 - v i dss zero gate voltage drain current v ds =100v,v gs =0v - - 1 a i gss gate-body leakage current v gs =20v,v ds =0v - - 100 na on characteristics (note 3) v gs(th) gate threshold voltage v ds =v gs ,i d =250 a 1.3 1.9 2.5 v r ds(on) drain-source on-state resistance v gs =10v, i d =10a - 27 31 m ? g fs forward transconductance v ds =5v,i d =10a - 15 - s dynamic characteristics (note4) c lss input capacitance - 2000 - pf c oss output capacitance - 300 - pf c rss reverse transfer capacitance v ds =25v,v gs =0v, f=1.0mhz - 250 - pf switching characteristics (note 4) t d(on) turn-on delay time - 7 - ns t r turn-on rise time - 7 - ns t d(off) turn-off delay time - 29 - ns t f turn-off fall time v dd =50v,r l =5 ? v gs =10v,r gen =3 ? - 7 - ns q g total gate charge - 39 - nc q gs gate-source charge - 8 - nc q gd gate-drain charge v ds =50v,i d =10a, v gs =10v - 12 - nc drain-source diode characteristics v sd diode forward voltage (note 3) v gs =0v,i s =10a - - 1.2 v i s diode forward current (note 2) - - - 30 a t rr reverse recovery time - 32 - ns qrr reverse recovery charge tj = 25c, if = 10a di/dt = 100a/ s (note3) - 53 - nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition : tj=25 ,v dd =50v,v g =10v,l=0.5mh,rg=25 ? , i as =32a more semiconductor company limited http://www.moresemi.com 2/6 MSN1030D
test circuit 1) e as test circuit 2) gate charge test circuit 3) switch time test circuit more semiconductor company limited http://www.moresemi.com 3/6 MSN1030D
typical electrical and the rmal characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 4/6 MSN1030D
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature ( ) figure 9 power de-rating t j -junction temperature( ) figure 10id current- junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance power dissipation (w) i d current (a) more semiconductor company limited http://www.moresemi.com 5/6 MSN1030D
to-252 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 2.200 2.400 0.087 0.094 a1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 d 6.500 6.700 0.256 0.264 d1 5.100 5.460 0.201 0.215 d2 4.830 typ. 0.190 typ. e 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 l 9.800 10.400 0.386 0.409 l1 2.900 typ. 0.114 typ. l2 1.400 1.700 0.055 0.067 l3 1.600 typ. 0.063 typ. l4 0.600 1.000 0.024 0.039 1.100 1.300 0.043 0.051 0 8 0 8 h 0.000 0.300 0.000 0.012 v 5.350 typ. 0.211 typ. more semiconductor company limited http://www.moresemi.com 6/6 MSN1030D
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